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High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology: Taejoo Sim, Dong-min Lee, Wansik Kim, Kichul Kim, Jeung Won Choi, Min-Su Kim, Junghyun Kim; J. Electromagn. Eng. Sci. 2023;23(6):482-489. Published online November 30, 2023; DOI: https://doi.org/10.26866/jees.2023.6.r.193; Full text PubReader ePub PDF

A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology: Iljin Lee, Junghyun Kim, Sanggeun Jeon; J. Electromagn. Eng. Sci. 2017;17(3):147-152. Published online July 31, 2017; DOI: https://doi.org/10.5515/JKIEES.2017.17.3.147
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