Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs
Seong-In Cho, Won-Ho Jang, Ho-Young Cha, Hyungtak Kim
J. Electromagn. Eng. Sci. 2022;22(3):291-295. Published online 2022 May 31 DOI: https://doi.org/10.26866/jees.2022.3.r.89
|
Citations to this article as recorded by
Characterization of trap evolution in GaN-based HEMTs under pulsed stress
Qian Wen, Xiang Zheng, Xianwei Meng, Shiwei Feng, Pu Xu, Yamin Zhang
Microelectronics Reliability.2024; 152: 115298. CrossRef
|