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6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching
Jihoon Kim, Kwangseok Choi, Sangho Lee, Hongjong Park, Youngwoo Kwon
J Electromagn Eng Sci. 2016;16(1):44-51.

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6-GHz-to-18-GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance
ETRI Journal. 2017;39(5):737-745   Crossref logo
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2-6 GHz GaN distributed power amplifier MMIC with tapered gate-series/drain-shunt capacitors
International Journal of RF and Microwave Computer-Aided Engineering. 2016;26(5):456-465   Crossref logo
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A high power active circulator using GaN MMIC power amplifiers
Journal of Semiconductors. 2014;35(11):115003   Crossref logo
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Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios
Micromachines. 2014;5(3):711-721   Crossref logo

Ku‐band high power internally matched GaN HEMTs with 1.5 GHz bandwidth
Microelectronics International. 2013;30(1):19-23   Crossref logo
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Active-reactive scheduling of active distribution system considering interactive load and battery storage
Protection and Control of Modern Power Systems. 2017;2(1):   Crossref logo
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A 6–18 GHz broadband power amplifier MMIC with excellent efficiency
Journal of Semiconductors. 2014;35(1):015007   Crossref logo
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Large signal design method of distributed power amplifiers applied to a 2–18-GHz GaAs chip exhibiting high power density performances
International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering. 1996;6(4):259-269   Crossref logo
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80-110 GHz MMIC amplifiers using a 0.1-μm GaAs-based mHEMT technology
Microwave and Optical Technology Letters. 2012;54(8):1978-1982   Crossref logo

Lateral GaN Devices for Power Applications (from kHz to GHz)
Power GaN Devices. 2016;69-99   Crossref logo