CrossRef Text and Data Mining
Result of CrossRef Text and Data Mining Search is the related articles with entitled article. If you click link1 or link2 you will be able to reach the full text site of selected articles; however, some links do not show the full text immediately at now. If you click CrossRef Text and Data Mining Download icon, you will be able to get whole list of articles from literature included in CrossRef Text and Data Mining.
A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology
Dong-Hwan Shin, In-Bok Yom, Dong-Wook Kim
J Electromagn Eng Sci. 2017;17(4):178-180.   Published online October 31, 2017
DOI: https://doi.org/10.26866/jees.2017.17.4.178

Excel Download

A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology
Journal of Electromagnetic Engineering and Science. 2017;17(4):178-180   Crossref logo
Link1 Link2 Link3

X-band MMIC low-noise amplifier MMIC on SiC substrate using 0.25-μm ALGaN/GaN HEMT technology
Microwave and Optical Technology Letters. 2013;56(1):96-99   Crossref logo
Link1

2-6 GHz GaN distributed power amplifier MMIC with tapered gate-series/drain-shunt capacitors
International Journal of RF and Microwave Computer-Aided Engineering. 2016;26(5):456-465   Crossref logo
Link1 Link2

Broadband GaN HEMT distributed power amplifier design with phase adjustment
Microwave and Optical Technology Letters. 2017;60(1):253-256   Crossref logo
Link1 Link2

0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design
International Journal of Electrical and Computer Engineering (IJECE). 2018;8(3):1837   Crossref logo
Link1 Link2

A High Power-Added-Efficiency 2.5-GHz Class-F Power Amplifier Using 0.5 μm GaN on SiC HEMT Technology
Journal of Computer and Communications. 2016;04(03):74-78   Crossref logo
Link1 Link2 Link3

X-band 100 W solid-state power amplifier using a 0.25 μM GaN HEMT technology
Microwave and Optical Technology Letters. 2014;57(1):212-216   Crossref logo
Link1

15% bandwidth 7 GHz GaN-MMIC Doherty amplifier with enhanced auxiliary chain
Microwave and Optical Technology Letters. 2013;56(2):502-504   Crossref logo
Link1 Link2

A high‐efficiency inverse class‐F power amplifier using GaN HEMT
Microwave and Optical Technology Letters. 2008;50(9):2420-2422   Crossref logo
Link1 Link2

A ku-band distributed SPDT switch in 0.5 μm AlGaN/GaN HEMT technology
Microwave and Optical Technology Letters. 2018;60(2):462-465   Crossref logo
Link1 Link2