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Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs
Seong-In Cho, Won-Ho Jang, Ho-Young Cha, Hyungtak Kim
J. Electromagn. Eng. Sci. 2022;22(3):291-295.   Published online May 31, 2022
DOI: https://doi.org/10.26866/jees.2022.3.r.89

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Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs
Journal of Electromagnetic Engineering and Science. 2022;22(3):291-295   Crossref logo
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Design of Hybrid Schottky-Ohmic Gate in Normally-Off p-GaN Gate AlGaN/GaN HEMTs
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Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate
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Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs
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