Class-E CMOS PAs for GSM Applications

Lee, Hong-Tak; Lee, Yu-Mi; Park, Chang-Kun; Hong, Song-Cheol

doi:2009.9.1.32

J. Electromagn. Eng. Sci > Volume 9(1); 2009 > Article

Journal of the Korean Institute of Electromagnetic and Science 2009;9(1):32-38.
DOI: https://doi.org/10.5515/JKIEES.2009.9.1.032

Class-E CMOS PAs for GSM Applications

Hong-Tak Lee¹, Yu-Mi Lee¹, Chang-Kun Park², Song-Cheol Hong¹

¹School of EECS, Korea Advanced Institute of Science and Technology
²Hynix Semiconductor Inc.

Abstract

Various Class-E CMOS power amplifiers for GSM applications are presented. A stage-convertible transformer for a dual mode power amplifier is proposed to increase efficiency in the low-output power region. An integrated passive device(IPD) process is used to reduce combiner losses. A split secondary 1:2 transformer with IPD process is designed to obtain efficient and symmetric power combining. A quasi-four-pair structure of CMOS PA is also proposed to overcome the complexities of power combining.

Key words: Class E, CMOS, Power Amplifier, Power Combiner, Global System for Mobile Communication(GSM), Polar Transmitter, Transformer, Variable Load, Integrated Passive Device(IPD)