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Journal of the Korean Institute of Electromagnetic and Science 2001;1(1):73-77.
Design and Fabrication of the 0.1${mu}{textrm}{m}$ Г-Shaped Gate PHEMT`s for Millimeter-Waves
Seong-Dae Lee, Sung-Chan Kim, Bok-Hyoung Lee, Woo-Suk Sul, Byeong-Ok Lim, Dan-An, yong-soon Yoon, Sam-Dong kim, Dong-Hoon Shin, Jin-koo Rhee
Millimeter-wave INnovation Technology Research Center(MINT), Department of Electronics Engineering, Dogguk University
We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$mu$$Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\`s of 0.1 m$mu$ gate length.h.
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