The Design of SiGe HBT LNA for IMT-2000 Mobile Application

Lee, Jei-Young; Lee, Geun-Ho; Niu, Guofu; Cressler, John D.; Kim, J.H.; Lee, J.C.; Lee, B.; Kim, N.Y.

Journal of the Korean Institute of Electromagnetic and Science 2002;2(1):22-27.

Jei-Young Lee¹, Geun-Ho Lee¹, Guofu Niu², John D. Cressler², J.H. Kim¹, J.C. Lee¹, B. Lee¹, N.Y. Kim¹

¹RFIC Center, Mission Technology Research Center, Kwangwoon University
²Alabama Microelectronics Science and Technology Center, Auburn University, Al 36849, USA

Abstract

This paper describes a SiGe HBT low noise amplifier (LNA) design for IMT-2000 mobile applications. This LNA is optimized for linearity in consideration of the out-of-band-termination capacitance. This LNA yields a noise figure of 1.2 dB, 16 dB gain, an input return loss of 11 dB, and an output return loss of 14.3 dB over the desired frequency range (2.11-2.17 GHz). When the RF input power is -2i dBm, the input third order intercept point (IIP3) of 8.415 dBm and the output third order intercept point (OIP3) of 24.415 dBm are achieved.

Key words: SiGe HBT, low noise amplifier, out-of-band-termination technique.