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Journal of the Korean Institute of Electromagnetic and Science 2002;2(1):22-27.
The Design of SiGe HBT LNA for IMT-2000 Mobile Application
Jei-Young Lee1, Geun-Ho Lee1, Guofu Niu2, John D. Cressler2, J.H. Kim1, J.C. Lee1, B. Lee1, N.Y. Kim1
1RFIC Center, Mission Technology Research Center, Kwangwoon University
2Alabama Microelectronics Science and Technology Center, Auburn University, Al 36849, USA
This paper describes a SiGe HBT low noise amplifier (LNA) design for IMT-2000 mobile applications. This LNA is optimized for linearity in consideration of the out-of-band-termination capacitance. This LNA yields a noise figure of 1.2 dB, 16 dB gain, an input return loss of 11 dB, and an output return loss of 14.3 dB over the desired frequency range (2.11-2.17 GHz). When the RF input power is -2i dBm, the input third order intercept point (IIP3) of 8.415 dBm and the output third order intercept point (OIP3) of 24.415 dBm are achieved.
Key words: SiGe HBT, low noise amplifier, out-of-band-termination technique.


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