J Korean inst Electromagn Sci Search

CLOSE


Journal of the Korean Institute of Electromagnetic and Science 2003;3(1):1-6.
The Design of a Sub-Harmonic Dual-Gate FET Mixer
Jeongpyo Kim1, Hyok Lee1, Jaehoon Park2
1Dept. of Electrical and Computer Eng., Hanyang Univ.
2Div. of Electrical and Computer Eng., Hanyang Univ.
Abstract
In this paper, a sub-harmonic dual-gate FET mixer is suggested to improve the isolation characteristic between LO and RF ports of an unbalanced mixer. The mixer was designed by using single-gate FET cascode structure and driven by the second harmonic component of LO signal. A dual-gate FET mixer has good isolation characteristic since RF and LO signals are injected into gatel and gate2, respectively. In addition, the isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer due to the large frequency separation between the LO and RF frequencies. As RF power was -30 ㏈m and LO power was 0 ㏈m, the designed mixer yielded the -47.17 ㏈m LO-to-RF leakage power level, 10 ㏈ conversion gain, -2.5 ㏈m OIP3, -12.5 ㏈m IIP3 and -1 ㏈m 1 ㏈ gain compression point. Since the LO-to-RF leakage power level of the designed mixer is as good as that of a double-balanced mixer, the sub-harmonic dual-gate FET mixer can be utilized instead.
Key words: Dual-gate FET Mixer, Sub-harmonic Mixer, LO-to-RF Isolation
TOOLS
Share :
Facebook Twitter Linked In Google+
METRICS Graph View
  • 160 View
  • 3 Download
Related articles in JEES

ABOUT
ARTICLE CATEGORY

Browse all articles >

BROWSE ARTICLES
AUTHOR INFORMATION
Editorial Office
#706 Totoo Valley, 217 Saechang-ro, Yongsan-gu, Seoul 04376, Korea
Tel: +82-2-337-9666    Fax: +82-2-6390-7550    E-mail: admin-jees@kiees.or.kr                

Copyright © 2018 by The Korean Institute of Electromagnetic Engineering and Science. All rights reserved.

Developed in M2community

Close layer
prev next