J Korean inst Electromagn Sci Search

CLOSE


Journal of the Korean Institute of Electromagnetic and Science 2003;3(1):29-34.
A 1.8 GHz SiGe HBT VCO using 0.5μm BiCMOS Process
Ja-Yol Lee1, Sang-Heung Lee1, Jin-Young Kang1, Kyu-Hwan Shim1, Kyoung-Ik Cho1, Seung-Hyeub Oh2
1SiGe Device Teams, ETRI
2Dept. of Electronics Enigeering, Chungnam National University
Abstract
In this paper, we fabricated an 1.8 ㎓ differential VCO using a commercial 0.5 ${mu}{textrm}{m}$ SiGe BiCMOS process technology, The fabricated VCO consumes 16 ㎃ at 3 V supply voltage and has a 1.2 $times$ 1.6 $mm^2$TEX>chip area. A phase noise measured at 100 KHz offset carrier is -110 ㏈c/Hz and a tuning range is 1795 MHz~1910 MHz when two varactor diodes are biased from 0 V to 3 V.
Key words: SiGe, BiCMOS, VCO, Phase Noise, Flicker Noise
TOOLS
Share :
Facebook Twitter Linked In Google+
METRICS Graph View
  • 1,009 View
  • 7 Download
Related articles in JEES

ABOUT
ARTICLE CATEGORY

Browse all articles >

BROWSE ARTICLES
AUTHOR INFORMATION
Editorial Office
#706 Totoo Valley, 217 Saechang-ro, Yongsan-gu, Seoul 04376, Korea
Tel: +82-2-337-9666    Fax: +82-2-6390-7550    E-mail: admin-jees@kiees.or.kr                

Copyright © 2024 by The Korean Institute of Electromagnetic Engineering and Science.

Developed in M2PI

Close layer
prev next