| Multi-Gbit/s Digital I/O Interface Based on RF-Modulation and Capacitive Coupling |
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Hyunchol Shin |
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Department of Radio Science and Engineering, Kwangwoon University |
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| Abstract |
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We present a multi-Gbit/s digital I/O interface based on RF-modulation and capacitive-coupling over an impedance matched transmission line. The RF-interconnect(RFI) can greatly reduce the digital switching noise and eliminate the dc power dissipation over the channel. It also enables reduced signal amplitude(as low as 200 ㎷) with enhanced data rate and affordable circuit overhead. This paper addresses the system advantages and implementation issues of RFI. A prototype on-chip RFI transceiver is implemented in 0.18-${mu}{textrm}{m}$ CMOS. It demonstrates a maximum data rate of 2.2 Gbit/s via 10.5-㎓ RF-modulation. The RFI can be very instrumental for future high-speed inter- and intra-ULSI data links. |
| Key words:
RF Interconnect, CMOS RF Integrated Circuit, High-Speed Digital Interface |
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