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Journal of the Korean Institute of Electromagnetic and Science 2005;5(3):112-116.
An Ultra Wideband Low Noise Amplifier in 0.18 μm RF CMOS Technology
Ji-Hak Jung, Tae-Yeoul Yun, Jae-Hoon Choi
Department of Electronics and Computer Engineering, Hanyang University
Abstract
This paper presents a broadband two-stage low noise amplifier(LNA) operating from 3 to 10 GHz, designed with 0.18 ${mu}m$ RF CMOS technology, The cascode feedback topology and broadband matching technique are used to achieve broadband performance and input/output matching characteristics. The proposed UWB LNA results in the low noise figure(NF) of 3.4 dB, input/output return loss($S_{11}/S_{22}$) of lower than -10 dB, and power gain of 14.5 dB with gain flatness of $pm$1 -dB within the required bandwidth. The input-referred third-order intercept point($IIP_3$) and the input-referred 1-dB compression point($P_{ldB}$) are -7 dBm and -17 dBm, respectively.
Key words: CMOS, Cascode, Feedback, Low Noise Amplifier, Ultra Wideband

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