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Journal of the Korean Institute of Electromagnetic and Science 2005;5(4):153-160.
Design of a Planar Cavity Resonator for 12.5 GHz Low Phase Noise SiGe HBT Oscillator
Jae-Woo Lee1, Yong-Hoon Kim2
1Samsung Thales Co., Ltd.
2Department of Mechatronics, Gwangju Institute of Science Technology
In this paper, the novel microwave oscillator incorporating a planar cavity resonator(PCR) is presented to reduce the phase noise of the oscillator in a planar environment. Compared to the conventional planar( $lambda$/4 open stub resonator), the phase noise is improved about 16 dBc/Hz @100 kHz. The design of the oscillator is based on a reflection type configuration using the low 1/f SiGe HBT transistor(LPT16ED). The output power is measured 2.76 dBm at 12.5 GHz. In this paper, the oscillator used to the PCR can be expected to provide a solution for low phase noise oscillator in microwave circuits.
Key words: Planar Cavity Resonator, Microstrip Resonator, HBT, MEMS, MMIC


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