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J. Electromagn. Eng. Sci > Volume 7(2); 2007 > Article
Journal of the Korean Institute of Electromagnetic and Science 2007;7(2):64-68.
DOI: https://doi.org/10.5515/JKIEES.2007.7.2.064   
An InGaP/GaAs HBT Based Differential Colpitts VCO with Low Phase Noise
Bhanu Shrestha, Nam-Young Kim
Department of Electronic Engineering, Graduate School of Kwangwoon University
Abstract
An InGaP/GaAs HBT based differential Colpitts voltage control oscillator(VCO) is presented in this paper. In the VCO core, two switching transistors are introduced to steer the core bias current to save power. An LC tank with an inductor quality factor(Q) of 11.4 is used to generate oscillation frequency. It has a superior phase noise characteristics of -130.12 dBc/Hz and -105.3 at 1 MHz and 100 kHz frequency offsets respectively from the carrier frequency(1.566 GHz) when supplied with a control voltage of 0 volt. It dissipates output power of -5.3 dBm. Two pairs of on-chip base collector (BC) diodes are used in the tank circuit to increase the VCO tuning range(168 MHz). This VCO occupies the area of $1.070{times}0.90mm^2$ including buffer and pads.
Key words: VCO, MMIC VCO, Differential VCO, InGaP/GaAs HBT VCO, Voltage Controlled Oscillator, Differential Colpitts VCO, Low Phase Noise VCO

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