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 J Electromagn Eng Sci > Volume 8(3); 2008 > Article
 Journal of the Korean Institute of Electromagnetic and Science 2008;8(3):96-99. DOI: https://doi.org/10.5515/JKIEES.2008.8.3.096
 A 0.13-μm CMOS RF Tx/Rx Switch for Wideband Applications Jeong-Yeon Kim, Chang-Wan Kim Dept. of Electronics Engineering, Dong-A University Abstract This paper describes a $0.13-{mu}m$ CMOS RF switch for $3{sim}5$ GHz UWB band(mode 1). It can improve isolation characteristics between ports by using deep n-well RF devices while their source and body terminals are separated. From the measurement results, the proposed T/R switch is comparative to the on-wafer probing measurement results of the series-shunt T/R switches. When the proposed T/R switch operates as Tx mode, measured insertion loss from Tx to output port is less than 1.5 dB and isolation between Tx and Rx is more than 27 dB for $3{sim}5$ GHz. Return loss for the Tx port is more than -10 dB and input P1dB is +10 dBm. Key words: CMOS, Switch, SPDT, Ultra-Wideband, UWB
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