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J Electromagn Eng Sci > Volume 8(3); 2008 > Article
Journal of the Korean Institute of Electromagnetic and Science 2008;8(3):114-118.
DOI: https://doi.org/10.5515/JKIEES.2008.8.3.114   
CMOS Direct-Conversion RF Front-End Design for 5-GHz WLAN
Nam-Jin Oh
Department of Electronic Engineering, Chungju National University
Abstract
Direct-conversion RF front-end for 5-GHz WLAN is implemented in $0.18-{mu}m$ CMOS technology. The front-end consists of a low noise amplifier, and low flicker noise down-conversion mixers. For the mixer, an inductor is included to resonate out parasitic tail capacitances in the transconductance stage at the operating frequency, thereby improves the flicker noise performance of the mixer, and the overall noise performance of the front-end. The receiver RF front-end has 6.5 dB noise figure, - 13 dBm input IP3, and voltage conversion gain of 20 dB with the power consumption of 30 mW.
Key words: IEEE802.11a, CMOS, HiperLAN2, OFDM, Radio Frequency(RF), Transceiver, WLAN
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