J Korean inst Electromagn Sci Search


J Electromagn Eng Sci > Volume 8(3); 2008 > Article
Journal of the Korean Institute of Electromagnetic and Science 2008;8(3):129-133.
DOI: https://doi.org/10.5515/JKIEES.2008.8.3.129   
High Performance Wilkinson Power Divider Using Integrated Passive Technology on SI-GaAs Substrate
Cong Wang, Cheng Qian, De-Zhong Li, Wen-Cheng Huang, Nam-Young Kim
Department of Electronic Engineering, Kwangwoon University
An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42;mm^2$.
Key words: Integrated Passive Devices, Wilkinson Power Divider, SI-GaAs Substrate, DCS
Share :
Facebook Twitter Linked In Google+
METRICS Graph View
  • 1 Crossref
  • 948 View
  • 3 Download
Related articles in JEES


Browse all articles >

Editorial Office
#706 Totoo Valley, 217 Saechang-ro, Yongsan-gu, Seoul 04376, Korea
Tel: +82-2-337-9666    Fax: +82-2-6390-7550    E-mail: admin-jees@kiees.or.kr                

Copyright © 2021 by The Korean Institute of Electromagnetic Engineering and Science.

Developed in M2PI

Close layer
prev next