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J Electromagn Eng Sci > Volume 8(3); 2008 > Article
Journal of the Korean Institute of Electromagnetic and Science 2008;8(3):129-133.
DOI: https://doi.org/10.5515/JKIEES.2008.8.3.129   
High Performance Wilkinson Power Divider Using Integrated Passive Technology on SI-GaAs Substrate
Cong Wang, Cheng Qian, De-Zhong Li, Wen-Cheng Huang, Nam-Young Kim
Department of Electronic Engineering, Kwangwoon University
Abstract
An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42;mm^2$.
Key words: Integrated Passive Devices, Wilkinson Power Divider, SI-GaAs Substrate, DCS
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