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 J Electromagn Eng Sci > Volume 9(1); 2009 > Article
 Journal of the Korean Institute of Electromagnetic and Science 2009;9(1):7-11. DOI: https://doi.org/10.5515/JKIEES.2009.9.1.007
 A 0.18-μm CMOS UWB LNA Combined with High-Pass-Filter Jeong-Yeon Kim, Chang-Wan Kim Dept. of Electronics Engineering, Dong-A University Abstract An Ultra-WideBand(UWB) Low-Noise Amplifier(LNA) is proposed and is implemented in a $0.18-{mu}m$ CMOS technology. The proposed UWB LNA provides excellent wideband characteristics by combining a High-Pass Filter (HPF) with a conventional resistive-loaded LNA topology. In the proposed UWB LNA, the bell-shaped gain curve of the overall amplifier is much less dependent on the frequency response of the HPF embedded in the input stage. In addition, the adoption of fewer on-chip inductors in the input matching network permits a lower noise figure and a smaller chip area. Measurement results show a power gain of + 10 dB and an input return loss of more than - 9 dB over 2.7 to 6.2 GHz, a noise figure of 3.1 dB at 3.6 GHz and 7.8 dB at 6.2 GHz, an input PldB of - 12 dBm, and an IIP3 of - 0.2 dBm, while dissipating only 4.6 mA from a 1.8-V supply. Key words: CMOS, Low Noise Amplifier, RFIC, Ultra-Wideband, Wideband Amplifier
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