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J Electromagn Eng Sci > Volume 9(1); 2009 > Article
Journal of the Korean Institute of Electromagnetic and Science 2009;9(1):32-38.
DOI: https://doi.org/10.5515/JKIEES.2009.9.1.032   
Class-E CMOS PAs for GSM Applications
Hong-Tak Lee1, Yu-Mi Lee1, Chang-Kun Park2, Song-Cheol Hong1
1School of EECS, Korea Advanced Institute of Science and Technology
2Hynix Semiconductor Inc.
Abstract
Various Class-E CMOS power amplifiers for GSM applications are presented. A stage-convertible transformer for a dual mode power amplifier is proposed to increase efficiency in the low-output power region. An integrated passive device(IPD) process is used to reduce combiner losses. A split secondary 1:2 transformer with IPD process is designed to obtain efficient and symmetric power combining. A quasi-four-pair structure of CMOS PA is also proposed to overcome the complexities of power combining.
Key words: Class E, CMOS, Power Amplifier, Power Combiner, Global System for Mobile Communication(GSM), Polar Transmitter, Transformer, Variable Load, Integrated Passive Device(IPD)

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