J Korean inst Electromagn Sci Search

CLOSE


J Electromagn Eng Sci > Volume 9(2); 2009 > Article
Journal of the Korean Institute of Electromagnetic and Science 2009;9(2):78-84.
DOI: https://doi.org/10.5515/JKIEES.2009.9.2.078   
Effects of Drain Bias on Memory-Compensated Analog Predistortion Power Amplifier for WCDMA Repeater Applications
Yong-Sub Lee, Mun-Woo Lee, Sang-Ho Kam, Yoon-Ha Jeong
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
Abstract
This paper represents the effects of drain bias on the linearity and efficiency of an analog pre-distortion power amplifier(PA) for wideband code division multiple access(WCDMA) repeater applications. For verification, an analog predistorter(APD) with three-branch nonlinear paths for memory-effect compensation is implemented and a class-AB PA is fabricated using a 30-W Si LOMaS. From the measured results, at an average output power of 33 dBm(lO-dB back-off power), the PA with APD shows the adjacent channel leakage ratio(ACLR, ${pm}$5 MHz offset) of below -45.1 dBc, with a drain efficiency of 24 % at the drain bias voltage($V_{DD}$) of 18 V. This compared an ACLR of -36.7 dEc and drain efficiency of 14.1 % at the $V_{DD}$ of 28 V for a PA without APD.
Key words: Analog Predistorter(APD), Bias, Efficiency, Memory Effect, Power Amplifier(PA)
TOOLS
Share :
Facebook Twitter Linked In Google+
METRICS Graph View
  • 0 Crossref
  •   
  • 445 View
  • 0 Download
Related articles in JEES

ABOUT
ARTICLE CATEGORY

Browse all articles >

BROWSE ARTICLES
AUTHOR INFORMATION
Editorial Office
#706 Totoo Valley, 217 Saechang-ro, Yongsan-gu, Seoul 04376, Korea
Tel: +82-2-337-9666    Fax: +82-2-6390-7550    E-mail: admin-jees@kiees.or.kr                

Copyright © 2019 by The Korean Institute of Electromagnetic Engineering and Science. All rights reserved.

Developed in M2community

Close layer
prev next