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J Electromagn Eng Sci > Volume 9(3); 2009 > Article
Journal of the Korean Institute of Electromagnetic and Science 2009;9(3):159-163.
DOI: https://doi.org/10.5515/JKIEES.2009.9.3.159   
High-Performance Q-Band MMIC Phase Shifters Using InGaAs PIN Diodes
Mun-Ho Kim, Jung-Gil Yang, Kyoung-Hoon Yang
Department of Electrical Engineering and Computer Science at Korea Advanced Institute of Science and Technology(KAIST)
Abstract
This paper presents the design and implementation of Q-band MMIC phase shifters using InGaAs PIN diodes. The topology using a thin-film microstrip line(TFMS) has been proposed to achieve the desired phase-shift as well as good loss characteristics. Five single-bit MMIC phase shifters have been implemented by using a developed BCB(benzocyclobutene)-based multi-layer fabrication technology. The developed phase shifters have less than 3.4 dB of insertion loss and better than 11 dB of input and output return loss in the frequency range of 43 to 47 GHz. To the authors' knowledge, this is the first demonstration of high-performance InGaAs PIN diode-based MMIC phase shifters operating at Q-band frequencies.
Key words: Phase Shifter, TFMS, BCB, InGaAs PIN Diode
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