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J Electromagn Eng Sci > Volume 11(1); 2011 > Article
Journal of the Korean Institute of Electromagnetic and Science 2011;11(1):27-33.
DOI: https://doi.org/10.5515/JKIEES.2011.11.1.027   
Design of a 1~10 GHz High Gain Current Reused Low Noise Amplifier in 0.18 ㎛ CMOS Technology
Nack-Gyun Seong, Yo-Han Jang, Jae-Hoon Choi
Department of Electronics and Computer Engineering, Hanyang University
In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 ${mu}m$ CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A ${pi}$-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9~18.1 dB and a noise figure (NF) of 4.05~6.21 dB over the frequency band of interest (1~10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is $0.95{times}0.9$ mm.
Key words: Low Noise Amplifier, Low Power Consumption, Current Reused Technique, Ultra Wideband, ${\pi}$-Type LC Network.


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