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 J Electromagn Eng Sci > Volume 14(2); 2014 > Article
 Journal of Electromagnetic Engineering and Science 2014;14(2):61-67. DOI: https://doi.org/10.5515/JKIEES.2014.14.2.61
 A 0.13-㎛ Zero-IF CMOS RF Receiver for LTE-Advanced Systems Youngho Seo, Thanhson Lai, Changwan Kim Department of Electronics Engineering, Dong-A University Abstract This paper presents a zero-IF CMOS RF receiver, which supports three channel bandwidths of 5/10/40MHz for LTE-Advanced systems. The receiver operates at IMT-band of 2,500 to 2,690MHz. The simulated noise figure of the overall receiver is 1.6 dB at 7MHz (7.5 dB at 7.5 kHz). The receiver is composed of two parts: an RF front-end and a baseband circuit. In the RF front-end, a RF input signal is amplified by a low noise amplifier and $G_m$ with configurable gain steps (41/35/29/23 dB) with optimized noise and linearity performances for a wide dynamic range. The proposed baseband circuit provides a -1 dB cutoff frequency of up to 40MHz using a proposed wideband OP-amp, which has a phase margin of $77^{circ}$ and an unit-gain bandwidth of 2.04 GHz. The proposed zero-IF CMOS RF receiver has been implemented in $0.13-{mu}m$ CMOS technology and consumes 116 (for high gain mode)/106 (for low gain mode) mA from a 1.2 V supply voltage. The measurement of a fabricated chip for a 10-MHz 3G LTE input signal with 16-QAM shows more than 8.3 dB of minimum signal-to-noise ratio, while receiving the input channel power from -88 to -12 dBm. Key words: CMOS, LTE, LTE Advanced, RF Receiver, Passive Mixer, Wideband OP-Amp
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