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J Electromagn Eng Sci > Volume 14(4); 2014 > Article
Journal of Electromagnetic Engineering and Science 2014;14(4):342-345.
DOI: https://doi.org/10.5515/JKIEES.2014.14.4.342   
High Output Power and High Fundamental Leakage Suppression Frequency Doubler MMIC for E-Band Transceiver
Dong-Pil Chang, In-Bok Yom
Satellite & Wireless RF Technology Research Section, Electronics and Telecommunications Research Institute
An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial $0.1-{mu}m$ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of $2.5mm{times}1.2mm$.
Key words: Active Doubler, E-Band Transceiver, Frequency Multiplier, Monolithic Microwave Integrated Circuit (MMIC)
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