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J. Electromagn. Eng. Sci > Volume 14(4); 2014 > Article
Journal of Electromagnetic Engineering and Science 2014;14(4):399-404.
DOI: https://doi.org/10.5515/JKIEES.2014.14.4.399   
Highly Linear 2-Stage Doherty Power Amplifier Using GaN MMIC
Seunghoon Jee, Juyeon Lee, Seokhyeon Kim, Yunsik Park, Bumman Kim
Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH)
Abstract
A power amplifier (PA) for a femto-cell base station should be highly efficient, linear and small. The efficiency for amplification of a high peak-to-average power ratio (PAPR) signal was improved by designing an asymmetric Doherty PA (DPA). The linearity was improved by applying third-order inter-modulation (IM3) cancellation method. A small size is achieved by designing the DPA using GaN MMIC process. The implemented 2-stage DPA delivers a power-added efficiency (PAE) of 38.6% and a gain of 33.4 dB with an average power of 34.2 dBm for a 7.2 dB PAPR 10 MHz bandwidth LTE signal at 2.14 GHz.
Key words: Digital Predistortion (DPD), Doherty Power Amplifier (DPA), Gallium nitride (GaN), Long-Term Evolution (LTE), Monolithic Microwave Integrated Circuit (MMIC)

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