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J Electromagn Eng Sci > Volume 16(1); 2016 > Article
Journal of Electromagnetic Engineering and Science 2016;16(1):44-51.
DOI: https://doi.org/10.5515/JKIEES.2016.16.1.44   
6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching
Jihoon Kim, Kwangseok Choi, Sangho Lee, Hongjong Park, Youngwoo Kwon
School of Electrical Engineering and Computer Science and INMC, Seoul National University
Correspondence:  Jihoon Kim,Email: j7h7@snu.ac.kr
A commercial $0.25{mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.
Key words: $0.25{\mu}m$ Gallium Nitride (GaN) Process, Distributed L-C, Large-Signal Model, Monolithic Microwave Integrated Circuit (MMIC), Wideband Power Amplifier
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