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 J Electromagn Eng Sci > Volume 17(2); 2017 > Article
 Journal of Electromagnetic Engineering and Science 2017;17(2):105-107. DOI: https://doi.org/10.5515/JKIEES.2017.17.2.105
 A 6-16 GHz GaN Distributed Power Amplifier MMIC Using Self-bias Hongjong Park1, Wonho Lee2, Joonho Jung1, Kwangseok Choi1, Jaeduk Kim3, Wangyong Lee3, Changhoon Lee4, Youngwoo Kwon1 1School of Electrical Engineering and Computer Science and INMC, Seoul National University2Department of Electrical Engineering, Korea Advanced Institute of Science and Technology3EW Center, LIG Nex142nd Department, Agency for Defense Development Correspondence:  Youngwoo Kwon,Email: ykwon@snu.ac.kr Abstract The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band. Key words: $0.25{\mu}m$ Gallium Nitride Process, Distributed Power Amplifier, High-Power Amplifier, Monolithic Microwave Integrated Circuit, Self-bias
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