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A SiGe BiCMOS Amplifier-Frequency Doubler Chain Operating for 284–328 GHz: Junghwan Yoo, Jungsoo Kim, Jongwon Yun, Mehmet Kaynak, Jae-Sung Rieh; J. Electromagn. Eng. Sci. 2022;22(2):114-121. Published online March 31, 2022; DOI: https://doi.org/10.26866/jees.2022.2.r.67
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A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology: Iljin Lee, Junghyun Kim, Sanggeun Jeon; J. Electromagn. Eng. Sci. 2017;17(3):147-152. Published online July 31, 2017; DOI: https://doi.org/10.5515/JKIEES.2017.17.3.147
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CMOS 120 GHz Phase-Locked Loops Based on Two Different VCO Topologies: Junghwan Yoo, Jae-Sung Rieh; J. Electromagn. Eng. Sci. 2017;17(2):98-104.; DOI: https://doi.org/10.5515/JKIEES.2017.17.2.98
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A CMOS 180-GHz Signal Source with an Integrated Frequency Doubler: Jungsoo Kim, Myeong-Gyo Seo, Jae-Sung Rieh; J. Electromagn. Eng. Sci. 2016;16(4):229-231.; DOI: https://doi.org/10.5515/JKIEES.2016.16.4.229
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A D-Band Integrated Signal Source Based on SiGe 0.18μm BiCMOS Technology: Seungyoon Jung, Jongwon Yun, Jae-Sung Rieh; J. Electromagn. Eng. Sci. 2015;15(4):232-238.; DOI: https://doi.org/10.5515/JKIEES.2015.15.4.232
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Design of Reflector Type Frequency Doubler for Undesired Harmonic Suppression Using Harmonic Load Pull Simulation Technique: Jae-Woong Jang, Yong-Hoon Kim; J. Electromagn. Eng. Sci. 2007;7(4):175-182.; DOI: https://doi.org/10.5515/JKIEES.2007.7.4.175; PDF

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