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Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy: Junwoo Jung, Jong-Min Lee, Byoung-Gue Min, Dong Min Kang, Inho Kang, Hyungtak Kim; J. Electromagn. Eng. Sci. 2025;25(2):184-189. Published online December 13, 2024; DOI: https://doi.org/10.26866/jees.2025.3.r.259
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Bandwidth Extension of the Doherty Power Amplifier Using the Impedance Distribution and Control Circuit for the Post-Matching Network: Seungmin Woo, Woojin Choi, Jaekyung Shin, Yifei Chen, Youngchan Choi, Sooncheol Bae, Hyungjin Jeon, Youngyun Woo, Youngoo Yang; J. Electromagn. Eng. Sci. 2024;24(4):401-410. Published online July 31, 2024; DOI: https://doi.org/10.26866/jees.2024.4.r.240; Full text PubReader ePub PDF

Robust Ku-Band GaN Low-Noise Amplifier MMIC: Seong-Hee Han, Dong-Wook Kim; J. Electromagn. Eng. Sci. 2024;24(2):170-177. Published online March 31, 2024; DOI: https://doi.org/10.26866/jees.2024.2.r.217; Full text PubReader ePub PDF

High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology: Taejoo Sim, Dong-min Lee, Wansik Kim, Kichul Kim, Jeung Won Choi, Min-Su Kim, Junghyun Kim; J. Electromagn. Eng. Sci. 2023;23(6):482-489. Published online November 30, 2023; DOI: https://doi.org/10.26866/jees.2023.6.r.193; Full text PubReader ePub PDF

Compact Asymmetrical Quasi-MMIC Doherty Power Amplifier: Hong-Sun Yoon, Min-Soo Park, Jong-Min Yook, Dongsu Kim, Youngcheol Park; J. Electromagn. Eng. Sci. 2023;23(4):381-383. Published online July 31, 2023; DOI: https://doi.org/10.26866/jees.2023.4.l.15; Full text PubReader ePub PDF

C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness: Ha-Wuk Sung, Seong-Hee Han, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim, Dong-Wook Kim; J. Electromagn. Eng. Sci. 2022;22(6):678-685. Published online November 30, 2022; DOI: https://doi.org/10.26866/jees.2022.6.r.137
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Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs: Seong-In Cho, Won-Ho Jang, Ho-Young Cha, Hyungtak Kim; J. Electromagn. Eng. Sci. 2022;22(3):291-295. Published online May 31, 2022; DOI: https://doi.org/10.26866/jees.2022.3.r.89
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A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology: Dong-Hwan Shin, In-Bok Yom, Dong-Wook Kim; J. Electromagn. Eng. Sci. 2017;17(4):178-180. Published online October 31, 2017; DOI: https://doi.org/10.26866/jees.2017.17.4.178
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A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology: Iljin Lee, Junghyun Kim, Sanggeun Jeon; J. Electromagn. Eng. Sci. 2017;17(3):147-152. Published online July 31, 2017; DOI: https://doi.org/10.5515/JKIEES.2017.17.3.147
Crossref 3; PDF

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating: Keigo Nakatani, Toshio Ishizaki; J. Electromagn. Eng. Sci. 2015;15(2):82-88.; DOI: https://doi.org/10.5515/JKIEES.2015.15.2.82
Crossref 13; PDF

Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors: Pil-Seok Ko, Hyung-Moo Park; J. Electromagn. Eng. Sci. 2013;13(2):127-133.; DOI: https://doi.org/10.5515/JKIEES.2013.13.2.127; PDF

A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In_0.88GaP/In_0.4AlAs/In_0.4GaAs mHEMTs: Young-Min Kim, Yu-Min Koh, Young-Rak Park, Si-Young Lee, Kwang-Seok Seo, Young-Woo Kwon; J. Electromagn. Eng. Sci. 2009;9(4):218-222.; DOI: https://doi.org/10.5515/JKIEES.2009.9.4.218; PDF

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