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A D-Band Integrated Signal Source Based on SiGe 0.18μm BiCMOS Technology
Seungyoon Jung, Jongwon Yun, Jae-Sung Rieh
J. Electromagn. Eng. Sci. 2015;15(4):232-238. DOI: https://doi.org/10.5515/JKIEES.2015.15.4.232
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Citations to this article as recorded by
A SiGe BiCMOS Amplifier-Frequency Doubler Chain Operating for 284–328 GHz
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Thanh Ngoc Thi Do, Mingquan Bao, Zhongxia Simon He, Ahmed Hassona, Dan Kuylenstierna, Herbert Zirath
International Journal of Microwave and Wireless Te.2019; 11(5-6): 456. CrossRef A CMOS 180-GHz Signal Source with an Integrated Frequency Doubler
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