A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology
Iljin Lee, Junghyun Kim, Sanggeun Jeon
J. Electromagn. Eng. Sci. 2017;17(3):147-152.   Published online 2017 Jul 31     DOI: https://doi.org/10.5515/JKIEES.2017.17.3.147
Citations to this article as recorded by Crossref logo
Design of Experiment (DOE) Analysis of System Level ESD Noise Coupling to High-Speed Memory Modules
Jawad Yousaf, Muhammad Faisal, Jinsung Youn, Wansoo Nah
Electronics.2019; 8(2): 210.     CrossRef
A Terahertz CMOS V-Shaped Patch Antenna with Defected Ground Structure
Hyeongjin Kim, Wonseok Choe, Jinho Jeong
Sensors.2018; 18(8): 2432.     CrossRef
A Broadband THz On-Chip Transition Using a Dipole Antenna with Integrated Balun
Wonseok Choe, Jinho Jeong
Electronics.2018; 7(10): 236.     CrossRef