Design of a Planar Cavity Resonator for 12.5 GHz Low Phase Noise SiGe HBT Oscillator |
Jae-Woo Lee1, Yong-Hoon Kim2 |
1Samsung Thales Co., Ltd. 2Department of Mechatronics, Gwangju Institute of Science Technology |
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Abstract |
In this paper, the novel microwave oscillator incorporating a planar cavity resonator(PCR) is presented to reduce the phase noise of the oscillator in a planar environment. Compared to the conventional planar( $lambda$/4 open stub resonator), the phase noise is improved about 16 dBc/Hz @100 kHz. The design of the oscillator is based on a reflection type configuration using the low 1/f SiGe HBT transistor(LPT16ED). The output power is measured 2.76 dBm at 12.5 GHz. In this paper, the oscillator used to the PCR can be expected to provide a solution for low phase noise oscillator in microwave circuits. |
Key words:
Planar Cavity Resonator, Microstrip Resonator, HBT, MEMS, MMIC |
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