J. Electromagn. Eng. Sci Search


J. Electromagn. Eng. Sci > Volume 14(2); 2014 > Article
Journal of Electromagnetic Engineering and Science 2014;14(2):61-67.
DOI: https://doi.org/10.5515/JKIEES.2014.14.2.61   
A 0.13-㎛ Zero-IF CMOS RF Receiver for LTE-Advanced Systems
Youngho Seo, Thanhson Lai, Changwan Kim
Department of Electronics Engineering, Dong-A University
This paper presents a zero-IF CMOS RF receiver, which supports three channel bandwidths of 5/10/40MHz for LTE-Advanced systems. The receiver operates at IMT-band of 2,500 to 2,690MHz. The simulated noise figure of the overall receiver is 1.6 dB at 7MHz (7.5 dB at 7.5 kHz). The receiver is composed of two parts: an RF front-end and a baseband circuit. In the RF front-end, a RF input signal is amplified by a low noise amplifier and $G_m$ with configurable gain steps (41/35/29/23 dB) with optimized noise and linearity performances for a wide dynamic range. The proposed baseband circuit provides a -1 dB cutoff frequency of up to 40MHz using a proposed wideband OP-amp, which has a phase margin of $77^{circ}$ and an unit-gain bandwidth of 2.04 GHz. The proposed zero-IF CMOS RF receiver has been implemented in $0.13-{mu}m$ CMOS technology and consumes 116 (for high gain mode)/106 (for low gain mode) mA from a 1.2 V supply voltage. The measurement of a fabricated chip for a 10-MHz 3G LTE input signal with 16-QAM shows more than 8.3 dB of minimum signal-to-noise ratio, while receiving the input channel power from -88 to -12 dBm.
Key words: CMOS, LTE, LTE Advanced, RF Receiver, Passive Mixer, Wideband OP-Amp
Share :
Facebook Twitter Linked In Google+
METRICS Graph View
  • 1 Crossref
  • 1,551 View
  • 12 Download
Related articles in JEES


Browse all articles >

Editorial Office
#706 Totoo Valley, 217 Saechang-ro, Yongsan-gu, Seoul 04376, Korea
Tel: +82-2-337-9666    Fax: +82-2-6390-7550    E-mail: admin-jees@kiees.or.kr                

Copyright © 2023 by The Korean Institute of Electromagnetic Engineering and Science.

Developed in M2PI

Close layer
prev next