| A Fully Integrated Dual-Band WLP CMOS Power Amplifier for 802.11n WLAN Applications |
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Seungjun Baek1, Hyunjin Ahn1, Hyunsik Ryu1, Ilku Nam1, Deokgi An2, Doo-Hyouk Choi2, Mun-Sub Byun2, Minsu Jeong2, Bo-Eun Kim2, Ockgoo Lee1 |
1School of Electronic and Computer Engineering, Pusan National University
2RAONTECH Inc. |
Correspondence:
Ockgoo Lee,Email: olee@pusan.ac.kr
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| Abstract |
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A fully integrated dual-band CMOS power amplifier (PA) is developed for 802.11n WLAN applications using wafer-level package (WLP) technology. This paper presents a detailed design for the optimal impedance of dual-band PA (2 GHz/5 GHz PA) output transformers with low loss, which is provided by using 2:2 and 2:1 output transformers for the 2 GHz PA and the 5 GHz PA, respectively. In addition, several design issues in the dual-band PA design using WLP technology are addressed, and a design method is proposed. All considerations for the design of dual-band WLP PA are fully reflected in the design procedure. The 2 GHz WLP CMOS PA produces a saturated power of 26.3 dBm with a peak power-added efficiency (PAE) of 32.9%. The 5 GHz WLP CMOS PA produces a saturated power of 24.7 dBm with a PAE of 22.2%. The PA is tested using an 802.11n signal, which satisfies the stringent error vector magnitude (EVM) and mask requirements. It achieved an EVM of -28 dB at an output power of 19.5 dBm with a PAE of 13.1% at 2.45 GHz and an EVM of -28 dB at an output power of 18.1 dBm with a PAE of 8.9% at 5.8 GHz. |
| Key words:
CMOS, Integrated Circuit, Power Amplifier, Transformer, WLAN |
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