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J. Electromagn. Eng. Sci > Volume 17(1); 2017 > Article
Journal of Electromagnetic Engineering and Science 2017;17(1):20-28.
DOI: https://doi.org/10.5515/JKIEES.2017.17.1.20   
A Fully Integrated Dual-Band WLP CMOS Power Amplifier for 802.11n WLAN Applications
Seungjun Baek1, Hyunjin Ahn1, Hyunsik Ryu1, Ilku Nam1, Deokgi An2, Doo-Hyouk Choi2, Mun-Sub Byun2, Minsu Jeong2, Bo-Eun Kim2, Ockgoo Lee1
1School of Electronic and Computer Engineering, Pusan National University
Correspondence:  Ockgoo Lee,Email: olee@pusan.ac.kr
A fully integrated dual-band CMOS power amplifier (PA) is developed for 802.11n WLAN applications using wafer-level package (WLP) technology. This paper presents a detailed design for the optimal impedance of dual-band PA (2 GHz/5 GHz PA) output transformers with low loss, which is provided by using 2:2 and 2:1 output transformers for the 2 GHz PA and the 5 GHz PA, respectively. In addition, several design issues in the dual-band PA design using WLP technology are addressed, and a design method is proposed. All considerations for the design of dual-band WLP PA are fully reflected in the design procedure. The 2 GHz WLP CMOS PA produces a saturated power of 26.3 dBm with a peak power-added efficiency (PAE) of 32.9%. The 5 GHz WLP CMOS PA produces a saturated power of 24.7 dBm with a PAE of 22.2%. The PA is tested using an 802.11n signal, which satisfies the stringent error vector magnitude (EVM) and mask requirements. It achieved an EVM of -28 dB at an output power of 19.5 dBm with a PAE of 13.1% at 2.45 GHz and an EVM of -28 dB at an output power of 18.1 dBm with a PAE of 8.9% at 5.8 GHz.
Key words: CMOS, Integrated Circuit, Power Amplifier, Transformer, WLAN


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