| Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure |
Byeong-Uk Lee 
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HW Team (Radar), Hanwha Systems, Yongin, Korea |
Correspondence:
Byeong-Uk Lee,Email: bulee0412@hanwha.com
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Received: 11 October 2023 • Revised: 23 January 2024 • Accepted: 10 July 2024 |
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| Abstract |
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In this work, an X-band gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a switched impedance network for improved noise performance is designed and fabricated using a 0.25 μm GaN WIN-semiconductor process. Notably, the term "switched impedance network" not only refers to the role of isolating receive and transmit paths, which is typically performed by a switch, but also signifies the utilization of a switch as a matching network. The size and matching loss of the proposed MMIC is minimized by replacing the LNA input-matching network with a single-pole double-throw switch. The fabricated LNA MMIC exhibits a noise figure of 1.9–2.3 dB, gain of 16–17 dB, and input/output return loss of 6–30 dB at a frequency range of 8–10 GHz. Under pulse conditions, it presents a maximum input power of 37 dBm and a saturated output power of 19 dBm. |
| Key words:
GaN, LNA, MMIC, SPDT Switch, X-Band MMIC |
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