1. Design of Unit Cells
The proposed HRA comprises three phase states (3-states), achieved by combining a passive unit cell and a 1-bit unit cell [
6]. Despite utilizing the same control circuit as a 1-bit RRMA, the proposed HRA was able to realize beam switching while maintaining a higher quantization efficiency than the 1-bit control system for specific steering angles. To implement 3-states, the phase difference among the phase states of the unit cell had to satisfy 120°. Notably, as long as the phase difference condition is satisfied, the quantization efficiency will remain the same, notwithstanding the phase value. As a result, HRAs of various phases with a phase difference of 120° were designed.
To calculate the gain bandwidth with regard to changes in the reflection phase, eight phase types of passive and 1-bit unit cells were designed in the shape of a square ring patch, as shown in
Fig. 1. The unit cells were patterned on Taconic TLY-5 substrates (
ɛr = 2.2, tanδ = 0.0009)—its top and bottom layers measuring 1.575 mm and 0.508 mm, respectively—bearing a periodicity of 10.5 mm (0.35λ
0). As shown in
Fig. 1, each unit cell consists of a pattern in Layer 1 and a ground in Layer 2. The 1-bit active unit cell features an additional layer (Layer 3) comprising a bias circuit, as well as a PIN diode for on and off switching control that operates with a DC voltage of 1.2 V supplied through bias and shorting vias. For the PIN diode, MA4GP907 of MACOM, which operates in the X-band, was employed.
Finally, eight pairs of passive and 1-bit active unit cells were designed to investigate the gain bandwidth. As shown in
Fig. 1, the design dimensions affecting the reflection phase of the unit cells were
L1,
L2,
W1,
W2, and
pl, whose ranges were considered as follows: 4 mm ≤
L1 or
L2 ≤ 10 mm, 0.5 mm ≤
W1 or
W2 ≤ 3 mm, and 0.1 mm ≤
pl ≤ 4 mm. Here,
L1,
L2, and
pl are primarily related to the resonant frequency, while
W1 and
W2 have a significant influence on the slope of the phase with respect to frequency. Considering these characteristics, an optimization procedure was performed by implementing a dimensional sweep based on the frequency-dependent phases extracted from the periodic boundary conditions using Ansys High-Frequency Structure Simulator (HFSS).
As indicated in
Table 1, the passive unit cells were designed to provide nearly full phase coverage, maintaining a reflection phase spacing of 45°. Accordingly, the 1-bit unit cells were designed to approximate a phase difference of 120° from the passive unit cells. Notably, the target phase exhibited some errors since it is difficult for 1-bit unit cells of various phases to satisfy a phase difference of 120°. However, these phase errors had only a minor effect on quantization efficiency. Overall, the designed pairs of passive and 1-bit unit cells exhibited similar theoretical gains at an operating frequency of 10.1 GHz.
2. Estimation of Gain Bandwidth
To calculate the gain bandwidth of the designed unit cells, eight types of 12 × 12 HRAs were designed for two beam switching directions. The gain bandwidths of the designed unit cells were then estimated by calculating the theoretical peak gain in terms of the frequency Gcal. (f), which can be expressed as follows:
where Gcal. (f) is the product of the physical peak gain Gmax. and the theoretical aperture efficiency ηap(f). Furthermore, Gmax. can be calculated by accounting for the aperture size S, wavelength λo, and switching angle θ, among which only λo affects the frequency. Meanwhile, ηap.(f) consists of the spillover ηs, taper ηt, element ηe, and quantization efficiencies ηq. The ηs and ηt can be determined by the gain, location, and offset angle of the feed horn, while ηe is related to the loss of the unit cell. Notably, these factors exhibit relatively low sensitivity to frequency. Meanwhile, ηq is related to the reflection phase, showing high sensitivity to frequency. As a result, Gmax. (f) can be approximated as a function of ηq(f). In this study, the values for ηs, ηt, and ηe were considered at the operating frequency of 10.1 GHz, following which ηq was calculated using the following equation:
where AF(θ,φ,f)q. and AF(θ,φ,f)c. indicate the array factors calculated by the quantized and continuous phases of the switching angle (θ,φ) and the frequency f, respectively.
The theoretical peak gain, calculated using
Eq. (1), was observed to be proportional to the quantization efficiency, with the highest value achieved at the center frequency
f0 of the unit cells. Based on this context, when the frequency of the unit cell deviates from the center frequency, the value of the peak gain will gradually decrease. Based on this characteristic, the theoretical gain bandwidth for
x dB of Gain BW
x dB can be calculated as follows:
where fH and fL indicate the highest and lowest frequencies at which the peak gain is reduced by x dB from the maximum value, respectively.
Eqs. (1) to
(3) were employed to construct HRAs for switching angles of 0° and ±30° in the E-plane. The metasurfaces, as illustrated in
Fig. 2, were implemented based on the design algorithm in [
9], which represents a method for arranging two types of unit cells such that the phase error can be minimized by applying the least square method. In particular, it is possible to design a metasurface with high quantization efficiency for beam switching in multiple directions. By replacing the two types of unit cells in the design algorithm with passive and 1-bit unit cells, optimal metasurfaces for the switching angles were designed, as shown in
Fig. 2. They were designed with an aperture size of 126 mm × 126 mm, along with a feed horn of 11 dBi, an F/D ratio of 0.36, and an offset angle of −25° in the xoz plane. At the center frequency of 10.1 GHz,
ηs and
ηt of the designed HRAs were found to be 82.1% and 83.5%, respectively, and
ηe was observed to be more than 90% for all designed unit cells. Furthermore, the quantization efficiencies for the switching angles of 0° and ±30° were estimated to be 70.6% and 54.0% at 10.1 GHz, respectively, varying significantly with frequency.
Fig. 2 presents the results obtained on calculating the 1-, 2-, and 3-dB gain bandwidths for the reflection phases of the designed passive unit cells. For each designed HRA, the x-axis and y-axis indicate the reflection phase of the passive unit cell and the gain bandwidth, respectively. It is evident that the two types of HRAs show similar behavior in terms of the reflection phase. Furthermore, on fine-tuning the reflection phases of the passive unit cells, it was found that HRAs with the maximum and minimum gain bandwidths occur at reflection phases of 52° and 220°, respectively.
To increase the gain bandwidth of a typical RRMA, a constant phase difference should be maintained over a wide frequency range [
10,
11]—a factor that clearly correlates with quantization efficiency. Thus, the ideal condition for achieving a wide gain bandwidth is to satisfy a phase difference of 120° over a wide frequency range. As shown in
Fig. 3, the reflection phase differences of the unit cells at the center frequency of 10 GHz are almost 120°. More specifically, it is clearly observed that phase differences of ~120° can be better maintained when the reflection phase of the passive unit cell in
Fig. 3(a) is 52° than when the reflection phase of the passive unit cell in
Fig. 3(b) is 220°. In other words, a wide gain bandwidth was obtained to design the reflection phase–frequency curve for each phase state (passive, 1-bit on or off) having a similar slope.
Based on this design, the calculated maximum and minimum 3-dB gain bandwidths were found to be 3,600 MHz (36%) and 870 MHz (8%) for the switching angle of 0° and 3,200 MHz (32%) and 730 MHz (7%) for switching angles of ±30°, respectively.