| Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors |
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Pil-Seok Ko, Hyung-Moo Park |
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Division of Electronics and Electrical Engineering, Dongguk University |
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| Abstract |
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We examined the scaling effects of a number of gate_fingers (N) and gate_widths (w) on the high-frequency characteristics of $0.1-{mu}m$ metamorphic high-electron-mobility transistors. Functional relationships of the extracted small-signal parameters with total gate widths ($w_t$) of different N were proposed. The cut-off frequency ($f_T$) showed an almost independent relationship with $w_t$; however, the maximum frequency of oscillation ($f_{max}$) exhibited a strong functional relationship of gate-resistance ($R_g$) influenced by both N and $w_t$. A greater $w_t$ produced a higher $f_{max}$; but, to maximize $f_{max}$ at a given $w_t$, to increase N was more efficient than to increase the single gate_width. |
| Key words:
Scaling Rule, HEMT, Small-Signal Parameters, Gate Width |
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