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J. Electromagn. Eng. Sci > Volume 13(2); 2013 > Article
Journal of Electromagnetic Engineering and Science 2013;13(2):127-133.
DOI: https://doi.org/10.5515/JKIEES.2013.13.2.127   
Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors
Pil-Seok Ko, Hyung-Moo Park
Division of Electronics and Electrical Engineering, Dongguk University
We examined the scaling effects of a number of gate_fingers (N) and gate_widths (w) on the high-frequency characteristics of $0.1-{mu}m$ metamorphic high-electron-mobility transistors. Functional relationships of the extracted small-signal parameters with total gate widths ($w_t$) of different N were proposed. The cut-off frequency ($f_T$) showed an almost independent relationship with $w_t$; however, the maximum frequency of oscillation ($f_{max}$) exhibited a strong functional relationship of gate-resistance ($R_g$) influenced by both N and $w_t$. A greater $w_t$ produced a higher $f_{max}$; but, to maximize $f_{max}$ at a given $w_t$, to increase N was more efficient than to increase the single gate_width.
Key words: Scaling Rule, HEMT, Small-Signal Parameters, Gate Width
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