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J. Electromagn. Eng. Sci > Volume 17(3); 2017 > Article
Journal of Electromagnetic Engineering and Science 2017;17(3):147-152.
DOI: https://doi.org/10.5515/JKIEES.2017.17.3.147    Published online July 31, 2017.
A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology
Iljin Lee1, Junghyun Kim2, Sanggeun Jeon1
1School of Electrical Engineering, Korea University, Seoul, Korea.
2Devision of Electronic Engineering, Hanyang University, Ansan, Korea.
Correspondence:  Sanggeun Jeon,Email: sgjeon@korea.ac.kr
Received: 7 April 2017   • Revised: 7 July 2017   • Accepted: 11 July 2017
This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency (fmax) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of −5.5 dB and a saturated output power of −7.5 dBm at 184 GHz.
Key words: Frequency Doubler, G-Band, GaAs pHEMT, Harmonic Matching
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